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669a478bc41260b0ca7fcc71 Toshiba Semiconductor and Storage SSM6N7002BFELMTR-ND,SSM6N7002BFELMCT-ND,SSM6N7002BFELMDKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a478cc41260b0ca7fcce1/264_sot-563.jpg

MOSFET 2N-CH 60V 0.2A ES6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 200mA
Rds On (Max) @ Id, Vgs 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 17pF @ 25V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Grade -
Qualification -
TT-DKEY-SSM6N7002BFELMTR-ND,SSM6N7002BFELMCT-ND,SSM6N7002BFELMDKR-ND
in stock INR 36
Toshiba Semiconductor and Storage
1 1

Toshiba Semiconductor and Storage SSM6N7002BFELMTR-ND,SSM6N7002BFELMCT-ND,SSM6N7002BFELMDKR-ND

Sku: TT-DKEY-SSM6N7002BFELMTR-ND,SSM6N7002BFELMCT-ND,SSM6N7002BFELMDKR-ND
₹36


Sold By: tenettech
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Description of product

MOSFET 2N-CH 60V 0.2A ES6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 200mA
Rds On (Max) @ Id, Vgs 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 17pF @ 25V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Grade -
Qualification -