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669a47a3c3c7c0bf55e0e862 Toshiba Semiconductor and Storage SSM6N35AFELFTR-ND,SSM6N35AFELFCT-ND,SSM6N35AFELFDKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a47a5c3c7c0bf55e0e8dd/264_sot-563.jpg

MOSFET 2N-CH 20V 0.25A ES6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Rds On (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 10V
Power - Max 250mW
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Grade -
Qualification -
TT-DKEY-SSM6N35AFELFTR-ND,SSM6N35AFELFCT-ND,SSM6N35AFELFDKR-ND
in stock INR 47.52
Toshiba Semiconductor and Storage
1 1

Toshiba Semiconductor and Storage SSM6N35AFELFTR-ND,SSM6N35AFELFCT-ND,SSM6N35AFELFDKR-ND

Sku: TT-DKEY-SSM6N35AFELFTR-ND,SSM6N35AFELFCT-ND,SSM6N35AFELFDKR-ND
₹47.52


Sold By: tenettech
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Description of product

MOSFET 2N-CH 20V 0.25A ES6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Rds On (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 10V
Power - Max 250mW
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Grade -
Qualification -