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669a483fb35f70da7909a4d3 Toshiba Semiconductor and Storage SSM6L36FELMTR-ND,SSM6L36FELMCT-ND,SSM6L36FELMDKR-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a4840b35f70da7909a4e2/264_sot-563.jpg

MOSFET N/P-CH 20V 0.5A ES6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 500mA, 330mA
Rds On (Max) @ Id, Vgs 630mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 10V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Grade -
Qualification -
TT-DKEY-SSM6L36FELMTR-ND,SSM6L36FELMCT-ND,SSM6L36FELMDKR-ND
in stock INR 51.839999999999996
Toshiba Semiconductor and Storage
1 1

Toshiba Semiconductor and Storage SSM6L36FELMTR-ND,SSM6L36FELMCT-ND,SSM6L36FELMDKR-ND

Sku: TT-DKEY-SSM6L36FELMTR-ND,SSM6L36FELMCT-ND,SSM6L36FELMDKR-ND
₹51.84


Sold By: tenettech
Features
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Description of product

MOSFET N/P-CH 20V 0.5A ES6

Product Attributes:

Series -
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 500mA, 330mA
Rds On (Max) @ Id, Vgs 630mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 10V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Grade -
Qualification -