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669a4830a2e791bef29a3f28 EPC 917-1184-2-ND,917-1184-1-ND,917-1184-6-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a4832a2e791bef29a3f58/mfg_epc2102_epc2103_epc2104.jpg

GANFET 2N-CH 100V 23A DIE

Product Attributes:

Series eGaN®
Product Status Active
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23A
Rds On (Max) @ Id, Vgs 6.3mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Grade -
Qualification -
TT-DKEY-917-1184-2-ND,917-1184-1-ND,917-1184-6-ND
in stock INR 1332
EPC
1 1

EPC 917-1184-2-ND,917-1184-1-ND,917-1184-6-ND

Sku: TT-DKEY-917-1184-2-ND,917-1184-1-ND,917-1184-6-ND
₹1,332


Sold By: tenettech
Features
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Description of product

GANFET 2N-CH 100V 23A DIE

Product Attributes:

Series eGaN®
Product Status Active
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23A
Rds On (Max) @ Id, Vgs 6.3mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Grade -
Qualification -