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669a481753119eec999f353f EPC 917-1110-2-ND,917-1110-1-ND,917-1110-6-ND https://www.tenettech.com/s/59c9e4669bd3e7c70c5f5e6c/669a481853119eec999f3559/mfg_epc2106_golden.jpg

GANFET 2N-CH 100V 1.7A DIE

Product Attributes:

Series eGaN®
Product Status Active
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Grade -
Qualification -
TT-DKEY-917-1110-2-ND,917-1110-1-ND,917-1110-6-ND
in stock INR 266.4
EPC
1 1

EPC 917-1110-2-ND,917-1110-1-ND,917-1110-6-ND

Sku: TT-DKEY-917-1110-2-ND,917-1110-1-ND,917-1110-6-ND
₹266.4


Sold By: tenettech
Features
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Description of product

GANFET 2N-CH 100V 1.7A DIE

Product Attributes:

Series eGaN®
Product Status Active
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Grade -
Qualification -